| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,100 pcs
|
1100 pcs | On Request | 1 | On Request | On Request | 16+PB | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STU2N62K3 is an N-Channel MOSFET from STMicroelectronics designed for high-voltage switching applications. Key specifications include a maximum drain-source voltage of 620V, continuous drain current of 2.2A, and on-resistance of 3.6 Ohm at 1.1A and 10V gate drive. The gate threshold voltage is 4.5V at 50µA, and the maximum gate-source voltage is ±30V.
Electrical characteristics feature an input capacitance of 340pF at 50V and a gate charge of 15nC at 10V. Maximum power dissipation is 45W at case temperature, and the operating junction temperature reaches up to 150°C.
The device is housed in a TO-251-3 Short Leads, IPak, TO-251AA through-hole package. It is RoHS3 compliant, MSL 1 unlimited, and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
620V.
TO-251-3 Short Leads, IPak, TO-251AA (through-hole).
150°C.
2.2A at case temperature.
3.6 Ohm at 1.1A and 10V gate drive.
15 nC at 10V.
340 pF at 50V.