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STU2N105K5 N-Channel MOSFET, 1050V drain-source voltage, 1.5A continuous drain current, 60W power dissipation. Through-hole TO-251-3 package.
Mfr Part #:

STU2N105K5

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
N-Channel MOSFET, 1050V drain-source voltage, 1.5A continuous drain current, 60W power dissipation. Through-hole TO-251-3 package.
✓ Total Stock: 3,000 pcs
$ Price Range: $2.56

STU2N105K5 Available from 1 distributor

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✓ Non-Authorised
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3,000 pcs
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3000 pcs On Request 1 On Request On Request On Request On Request On Request
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STU2N105K5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STU2N105K5 Description

Short technical summary and product information.

The STU2N105K5 is an N-channel power MOSFET manufactured by STMicroelectronics. It is designed for high-voltage switching applications with a maximum drain-to-source voltage of 1050V. The device can handle a continuous drain current of 1.5A at case temperature, with a maximum power dissipation of 60W.

 

The MOSFET features a maximum on-resistance (RDS(on)) of 8 ohms at a gate-to-source voltage of 10V and drain current of 750mA. The gate charge is 10 nC at 10V, and input capacitance is 115 pF at 100V drain-source voltage. The gate threshold voltage is 5V maximum at 100µA drain current.

 

The device is housed in a TO-251-3 through-hole package (also known as IPAK). It supports junction temperatures from -55°C to 150°C. The gate-source voltage range is ±30V. This MOSFET uses metal oxide semiconductor technology.

 

The STU2N105K5 is suitable for circuits requiring high blocking voltage and moderate current, such as switch-mode power supplies, inverters, and power management systems. Its through-hole packaging simplifies manual assembly and prototyping.

STU2N105K5 Quick Information

Product Type: MOSFET
Canonical Name: STU2N105K5 N-Channel MOSFET
Subcategory: Power MOSFET

STU2N105K5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STU2N105K5 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STU2N105K5 Features

  • N-channel MOSFET with 1050V voltage rating.
  • Continuous drain current of 1.5 amperes.
  • Maximum on-resistance of 8 ohms.
  • Through-hole TO-251 IPAK package.
  • Operating temperature -55°C to 150°C.

STU2N105K5 Applications

  • High voltage power switching applications.
  • DC-DC converter and inverter circuits.
  • Suitable for motor drive designs.
  • Power supply and battery charging.

STU2N105K5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STU2N105K5?

1050V maximum.

What is the continuous drain current?

1.5A at case temperature.

What is the on-resistance?

8 ohms maximum at 750mA and 10V gate voltage.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the package type of the STU2N105K5?

TO-251-3 through-hole IPAK package.

What is the gate threshold voltage?

5V maximum at 100µA drain current.

What is the gate charge?

10 nC at 10V gate voltage.

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