| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,775 pcs
|
11775 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STU13N60M2 is an N-Channel MOSFET designed for power switching applications. It offers a high drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 11A at a specific case temperature.
The MOSFET features a low Rds On of 380mOhm at 5.5A and 10V gate drive voltage, ensuring efficient power transfer. The gate charge (Qg) is 17nC at 10V, and the input capacitance (Ciss) is 580pF at 100V.
With an operating temperature range of -55°C to 150°C (TJ), this component is suitable for demanding environments. It is packaged in a TO-251 (IPAK) configuration with short leads and designed for through-hole mounting.
The STU13N60M2 utilizes MOSFET (Metal Oxide) technology and has a gate threshold voltage (Vgs(th)) of 4V at 250µA. The maximum gate-source voltage (Vgs) is ±25V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 600 V.
The continuous drain current is 11 A.
The maximum power dissipation is 110 W.
The Rds On (Max) is 380 mOhm at 5.5A, 10V.
The gate charge (Qg) is 17 nC at 10V.
The input capacitance (Ciss) is 580 pF at 100V.
The gate threshold voltage (Vgs(th)) is 4V at 250µA.