STU13005N The STMicroelectronics STU13005N is an NPN transistor designed for high switching speeds and high voltage capability. It features a TO-251 package and a maximum collector current of 3A.
Mfr Part #:

STU13005N

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STU13005N is an NPN transistor designed for high switching speeds and high voltage capability. It features a TO-251 package and a maximum collector current of 3A.
Total Stock: 5,500 pcs
$ Price Range: $0.51

STU13005N Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,500 pcs
5500 pcs On Request 1 On Request On Request 14+ On Request On Request

STU13005N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Base Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Mounting Type
Operating Temperature
Power
SVHC Present
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

STU13005N Description

Short technical summary and product information.

The STMicroelectronics STU13005N is a high-voltage NPN bipolar junction transistor (BJT) manufactured using multi-epitaxial planar technology. This technology ensures high switching speeds and robust high-voltage capability, making it suitable for demanding applications.

 

The device utilizes a cellular emitter structure with planar edge termination, which further enhances switching speeds while maintaining a wide Reverse Bias Safe Operating Area (RBSOA). Key electrical specifications include a maximum collector current of 3A, a collector-emitter voltage of 400V, and a collector-base voltage of 700V. The maximum power dissipation is rated at 30W, and it operates within a temperature range of -65°C to 150°C.

 

Packaged in a TO-251 (IPAK) through-hole configuration, the STU13005N is designed for ease of mounting on printed circuit boards. Its specifications make it a reliable component for power switching and amplification circuits where high voltage and fast response times are critical.

 

This transistor is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

STU13005N Quick Information

Product Type: NPN Transistor
Canonical Name: STMicroelectronics STU13005N NPN Transistor
Subcategory: Bipolar (BJT) - Single

STU13005N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

STU13005N Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

STU13005N Features

  • High voltage multi epitaxial planar technology.
  • High switching speeds and high voltage capability.
  • Cellular emitter structure for enhanced switching.
  • TO-251 (IPAK) through-hole package.
  • Rated for 400V collector-emitter voltage.

STU13005N Applications

  • Suitable for high-speed switching.
  • Ideal for high voltage applications.
  • Power supply circuits.
  • General purpose amplification.

STU13005N FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

400V.

What package is the STU13005N available in?

TO-251-3 (IPAK) through-hole package.

What is the operating temperature range?

-65°C to 150°C junction temperature.

What is the DC current gain (hFE)?

Minimum hFE of 10 at 1A collector current and 5V Vce.

What is the maximum collector current?

3A.

What is the power dissipation rating?

30W maximum.

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