STU12N60M2 The STMicroelectronics STU12N60M2 is an N-Channel MOSFET designed for power applications. It offers a 600V drain-to-source voltage and a continuous drain current of 9A.
Mfr Part #:

STU12N60M2

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STU12N60M2 is an N-Channel MOSFET designed for power applications. It offers a 600V drain-to-source voltage and a continuous drain current of 9A.
✓ Total Stock: 4,680 pcs
$ Price Range: $2.56

STU12N60M2 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 15+ On Request On Request
Non-Authorised Inventory information
1,680 pcs
1680 pcs On Request 1 On Request On Request 14+ On Request On Request

STU12N60M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STU12N60M2 Description

Short technical summary and product information.

The STMicroelectronics STU12N60M2 is a single N-Channel MOSFET from the STMicroelectronics MOSFET family. This component is designed for power switching applications, featuring a high drain-to-source voltage (Vdss) of 600V and a continuous drain current rating of 9A at a case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 450mOhm at 4.5A and 10V gate-source voltage. The gate charge (Qg) is 16nC maximum at 10V, and input capacitance (Ciss) is 538pF maximum at 100V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 85W (Tc). It is constructed using MOSFET (Metal Oxide) technology.

 

The STU12N60M2 is packaged in a TO-251-3 Short Leads, IPak, TO-251AA configuration, suitable for through-hole mounting.

STU12N60M2 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STU12N60M2 N-Channel MOSFET
Subcategory: N-Channel

STU12N60M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STU12N60M2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STU12N60M2 Features

  • 600V drain-to-source voltage rating.
  • 9A continuous drain current.
  • 450mOhm maximum on-resistance.
  • TO-251 (IPAK) package for through-hole mounting.
  • MOSFET (Metal Oxide) technology.

STU12N60M2 Applications

  • Suitable for power switching circuits.
  • Used in power supply designs.
  • Applicable for motor control.
  • Ideal for general purpose power applications.

STU12N60M2 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the STU12N60M2?

The drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current of the STU12N60M2?

The continuous drain current is 9A.

What is the maximum on-resistance for this MOSFET?

The Rds On is a maximum of 450mOhm at 4.5A and 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the STU12N60M2 in?

It is in a TO-251-3 Short Leads, IPak, TO-251AA package.

How is the STU12N60M2 mounted?

It is mounted using the through-hole method.

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