| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
84 pcs
|
84 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STU10NM65N is a high-performance N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 650V and a continuous drain current (Tc) of 9A, with a maximum power dissipation of 90W (Tc).
This MOSFET has a low on-resistance (Rds On) of 480mOhm at 4.5A and 10V gate drive voltage. The input capacitance (Ciss) is 850pF at 50V, and the gate charge (Qg) is 25nC at 10V. The gate threshold voltage (Vgs(th)) is 4V maximum at 250µA, with a maximum gate-to-source voltage of ±25V.
Packaged in a TO-251-3 Short Leads, IPak, TO-251AA format, the STU10NM65N is suitable for through-hole mounting. It operates at a maximum junction temperature of 150°C.
This component is RoHS3 compliant, has a Moisture Sensitivity Level (MSL) of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 650V.
The continuous drain current is 9A at case temperature.
The STU10NM65N is available in a TO-251-3 (IPAK) through-hole package.
The maximum junction temperature (Tj) is 150°C.
The maximum on-resistance is 480mOhm at 4.5A drain current and 10V gate-source voltage.
The maximum gate threshold voltage is 4V at 250µA drain current.
The maximum gate charge is 25nC at 10V gate-source voltage.