| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
38,240 pcs
|
38240 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STU10NM60N is an N-Channel MOSFET from STMicroelectronics, part of the MOSFET technology family. It is rated for a maximum drain-to-source voltage (Vdss) of 600V and can handle a continuous drain current of 10A (Tc). The on-resistance (Rds On) is a maximum of 550mOhm at 4A and 10V gate-source voltage. The gate charge (Qg) is 19nC at 10V, and input capacitance (Ciss) is 540pF at 50V. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA.
This component operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 70W (Tc). It is housed in a TO-251-3 Short Leads, IPak, TO-251AA package and features a through-hole mounting type. The STU10NM60N is suitable for various power switching applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
10A at case temperature.
550mOhm at 4A and 10V gate drive.
19nC at 10V gate-source voltage.
540pF at 50V drain-source voltage.
-55°C to 150°C junction temperature.
TO-251-3 (IPAK) through-hole package.