| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
85 pcs
|
85 pcs | On Request | 1 | On Request | On Request | 13 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STU10N60M2 is a single N-Channel MOSFET belonging to the Transistors - FETs, MOSFETs - Single category. It features a high drain-to-source voltage (Vdss) of 600V and a continuous drain current capability of 7.5A at a case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 600mOhm at 3A and 10V gate drive voltage. The input capacitance (Ciss) is rated at 400pF at 100V, and the gate charge (Qg) is 13.5nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 85W (Tc). It is housed in a TO-251 (IPAK) package with through-hole mounting.
The STU10N60M2 is constructed using MOSFET (Metal Oxide) technology and is suitable for various power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The continuous drain current is 7.5A at the case temperature.
The maximum on-resistance (Rds On) is 600mOhm at 3A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
It is supplied in a TO-251 (IPAK) package.
The STU10N60M2 is mounted using the through-hole method.