| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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43,500 pcs
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43500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STTFS015N10MCL from ON Semiconductor is a high-performance N-Channel MOSFET. It is designed for power switching applications requiring a breakdown voltage of 100V.
Key electrical characteristics include a maximum on-resistance of 12.9 mOhm at 14A and 10V Vgs, and a gate charge of 19 nC at 10V. The device operates with a gate-source voltage range of ±20V and has a gate threshold voltage of 3V at 77µA. It can handle a continuous drain current of 10A at ambient temperature and up to 42A at case temperature, with a maximum power dissipation of 2.5W at ambient and 45W at case temperature.
This MOSFET is suitable for various power management tasks. Its operating temperature range is from -55°C to 150°C (TJ). The technology employed is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET).
The STTFS015N10MCL is provided in a Surface Mount package, specifically the 8-PowerWDFN (3.3x3.3) variant. This mounting type is ideal for automated assembly processes and space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The continuous drain current is 42A at case temperature (Tc) and 10A at ambient temperature (Ta).
The maximum on-resistance is 12.9mOhm at Vgs=10V and Id=14A.
The operating junction temperature range is -55°C to 150°C.
The device is available in an 8-PowerWDFN package, specifically 8-WDFN (3.3x3.3mm).
The maximum gate threshold voltage is 3V at Id=77µA.
The maximum gate charge is 19nC at Vgs=10V.