| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,160 pcs
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2160 pcs | On Request | 1 | On Request | On Request | 0936+ | On Request | On Request |
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| SVHC Present | |
| Technology |
The STT6603 is a P-Channel MOSFET manufactured by Samhop, utilizing Trench technology for efficient switching. It is rated for a maximum drain-source voltage of -60V and a continuous drain current of -6.5A. The typical on-resistance is 58mΩ at VGS=10V, enabling low conduction losses. The gate-source voltage range is ±20V, with a threshold voltage between -1V and -3V.
The device is housed in a standard SOT223 surface mount package, suitable for automated assembly. It is designed for applications requiring high-side switching, load switching, and power management in low-voltage circuits. The Trench technology provides improved gate charge and switching performance.
This MOSFET is ideal for use in portable electronics, battery protection circuits, and power distribution systems where space and efficiency are critical. The surface mount package facilitates compact PCB designs.
The maximum drain-source voltage is -60V.
The maximum continuous drain current is -6.5A.
The typical on-resistance is 58mΩ at VGS=10V.
The gate threshold voltage ranges from -1V to -3V.
The device is packaged in SOT223 (surface mount).
It uses Trench technology.
Yes, it is designed for surface mount mounting.