| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
42,420 pcs
|
42420 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STT5N2VH5 is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. This device is optimized for very low on-state resistance, offering a competitive Figure of Merit (FOM).
Key electrical specifications include a drain-to-source voltage (Vdss) of 20V and a continuous drain current of 5A. The maximum on-resistance (Rds On) is 30mOhm at a gate-source voltage (Vgs) of 4.5V and a drain current (Id) of 2A. It requires a gate drive voltage of 2.5V and has a gate threshold voltage (Vgs(th)) of 700mV at 250µA.
This MOSFET is housed in a SOT-23-6 surface-mount package. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.6W (Tc).
The device features reduced conduction and switching losses, making it suitable for various power management applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
5A.
30mOhm maximum at 2A drain current and 4.5V gate drive.
SOT-23-6 surface-mount package.
-55°C to 150°C.
STripFET V technology from STMicroelectronics.