| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,000 pcs
|
18000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STT4P3LLH6 is a P-Channel MOSFET designed for surface mount applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 4A at a specific ambient temperature.
This MOSFET has a low on-resistance (Rds On) of 56mOhm maximum at 2A drain current and 10V gate-source voltage. The gate charge (Qg) is 6nC maximum at 4.5V gate-source voltage, and the input capacitance (Ciss) is 639pF maximum at 25V drain-source voltage.
With a maximum power dissipation of 1.6W at ambient temperature, the STT4P3LLH6 operates within a temperature range of -55°C to 150°C. It is housed in a compact SOT-23-6 package, suitable for space-constrained designs.
The device utilizes MOSFET (Metal Oxide) technology and is specified with a gate threshold voltage (Vgs(th)) of 2.5V maximum at 250µA. The maximum gate-to-source voltage is ±20V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
4A at ambient temperature.
56 milliohms maximum at 2A drain current and 10V gate voltage.
6 nanocoulombs at 4.5V gate voltage.
639 picofarads at 25V drain-source voltage.
SOT23-6 surface mount package.
150°C.