| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,578 pcs
|
28578 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STT3PF30L is a P-Channel MOSFET manufactured by STMicroelectronics. This component is designed for surface mount applications and comes in a SOT-23-6 package.
Key electrical characteristics include a maximum drain-to-source voltage (Vdss) of 30V and a continuous current rating of 2.4A (Tc). The MOSFET has a maximum Rds On of 165mOhm at 1.5A and 10V, with a gate threshold voltage (Vgs(th)) of 2.5V at 250µA. It operates within a temperature range of -55°C to 150°C (TJ).
This device utilizes MOSFET (Metal Oxide) technology. The input capacitance (Ciss) is 420 pF at 25V, and the gate charge (Qg) is 7 nC at 4.5V. The maximum gate-source voltage (Vgs) is ±16V.
Suitable for various electronic circuits requiring a P-Channel MOSFET, the STT3PF30L is designed for reliable performance in its specified operating conditions and package type.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30 V.
The continuous current rating is 2.4A (Tc).
The package type is SOT-23-6.
The STT3PF30L is a surface mount device.
The operating temperature range is -55°C to 150°C (TJ).
The Rds On (Max) is 165mOhm at 1.5A and 10V.
The gate threshold voltage (Vgs(th)) is 2.5V at 250µA.