| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,862 pcs
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2862 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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| Halogen Free | |
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| Technology |
The STMicroelectronics STT3PF20V$Y is a P-channel MOSFET designed for various electronic applications. It features a drain-source voltage rating of 30V and a continuous drain current of 4A, making it suitable for power switching and control circuits.
Key electrical characteristics include a maximum gate threshold voltage of 2.5V at 250µA and a maximum drain-source on-resistance of 56mOhm at 2A and 10V. The MOSFET has a maximum power dissipation of 1.6W (Ta) and an input capacitance of 639pF at 25V. The gate charge is rated at a maximum of 6nC at 4.5V.
This device operates within a temperature range of up to 150°C (TJ). It is housed in a compact SOT-23-6 surface-mount package, suitable for automated assembly processes. The MOSFET utilizes Metal Oxide technology and belongs to the DeepGATE™, STripFET™ H6 series.
Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status. The STT3PF20V$Y is designed for applications requiring efficient power management and switching capabilities.
The maximum on-resistance is 56mOhm at 2A drain current and 10V gate-source voltage.
The maximum gate threshold voltage is 2.5V at a drain current of 250µA.
The maximum gate-source voltage is ±20V.
It is available in a SOT-23-6 surface mount package.
The maximum operating junction temperature is 150°C.
The total gate charge is 6nC at 4.5V gate-source voltage.
The input capacitance is 639pF at 25V drain-source voltage.