| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,578 pcs
|
28578 pcs | On Request | 1 | On Request | On Request | 19+ROHS | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STT3PF20V is a P-Channel enhancement-mode MOSFET manufactured by STMicroelectronics using advanced MOSFET technology. It is designed for low-voltage power management and load switching applications.
Key electrical specifications include a maximum drain-to-source voltage of 20V, a maximum gate-to-source voltage of ±12V, and a typical gate threshold voltage of 600mV at 250µA drain current. The device features a maximum input capacitance of 315pF at Vds = 15V and a maximum gate charge of 4.7nC at Vgs = 4.5V, enabling efficient switching at moderate frequencies.
The STT3PF20V is housed in a compact SOT23-6 surface-mount package, suitable for space-constrained PCB designs. Its P-Channel polarity simplifies drive circuitry in high-side switching configurations.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 20V.
The maximum gate threshold voltage is 600mV at a drain current of 250µA.
The maximum input capacitance is 315pF at Vds = 15V.
The maximum gate charge is 4.7nC at Vgs = 4.5V.
The maximum gate-to-source voltage is ±12V.
It is a P-Channel MOSFET.