| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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22,238 pcs
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22238 pcs | On Request | 1 | On Request | On Request | 19+ROHS | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STT3P2UH7 is a P-Channel MOSFET manufactured by STMicroelectronics. It is designed for applications requiring a 20V drain-to-source voltage and can handle up to 3A of continuous current.
Key electrical characteristics include a maximum on-resistance of 100mOhm at 1.5A and 4.5V, a gate charge of 4.8nC, and an input capacitance of 510pF. The gate threshold voltage is 1V at 250µA, with a maximum gate-source voltage of ±8V.
This MOSFET operates at temperatures up to 150°C and dissipates a maximum of 1.6W. It is housed in a SOT-23-6 surface-mount package, making it suitable for space-constrained designs.
The STT3P2UH7 is categorized under Transistors - FETs, MOSFETs - Single, and is a reliable component for various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20 V.
3 A at case temperature Tc.
100 mOhm maximum at 1.5 A and 4.5 V gate drive.
Up to 150°C.
SOT-23-6 surface mount package.
1 V maximum at 250 µA.