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STT3930N The STT3930N-VB is a dual N-channel MOSFET from VBsemi, designed for low-voltage, high-efficiency switching applications. It features a 20V drain-source voltage and a 6A maximum drain current.
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STT3930N

Available from 1 distributors
Mfr Name: VBsemi
VBsemi
The STT3930N-VB is a dual N-channel MOSFET from VBsemi, designed for low-voltage, high-efficiency switching applications. It features a 20V drain-source voltage and a 6A maximum drain current.
✓ Total Stock: 28,985 pcs

STT3930N Available from 1 distributor

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Optech Co.,Limited ✓
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28,985 pcs
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28985 pcs On Request 1 On Request On Request 19+ On Request On Request
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STT3930N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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STT3930N Description

Short technical summary and product information.

The VBsemi STT3930N-VB is a dual N-channel MOSFET housed in a compact SOT23-6 package, engineered for efficient switching in low-voltage applications. It offers a maximum drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 6A.

 

Manufactured using Trench technology, this MOSFET exhibits a low on-resistance (RDS(ON)) of 28mΩ at VGS=2.5V and 22mΩ at VGS=4.5V. This characteristic ensures efficient power management and excellent current control.

 

The threshold voltage (Vth) ranges from 0.5V to 1.5V, making it suitable for low-voltage control circuits, including 3.3V and 5V systems. Its design is optimized for high-efficiency power management, load switching, and miniaturized electronic products.

 

Applications include portable devices, battery management systems, and other low-power electronic circuits where space and efficiency are critical. The STT3930N-VB is also suitable for DC-DC converters, buck and boost circuits, and battery protection circuits.

STT3930N Quick Information

Product Type: MOSFET
Canonical Name: STT3930N Dual N-Channel MOSFET
Subcategory: Dual N-Channel

STT3930N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STT3930N Features

  • Dual N-channel MOSFET in SOT23-6 package.
  • 20V maximum drain-source voltage.
  • 6A maximum continuous drain current.
  • Low on-resistance: 28mΩ @ VGS=2.5V.
  • Trench technology for high efficiency.

STT3930N Applications

  • Efficient power management systems.
  • DC-DC converters, buck and boost circuits.
  • Low-voltage load switches.
  • Battery protection circuits.
  • Portable electronic devices.

STT3930N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

20V.

What is the package type?

SOT23-6.

What is the operating temperature range?

-55°C to 150°C.

What is the maximum drain current?

6A.

What is the configuration of this MOSFET?

Dual N-channel.

What is the on-resistance at VGS=4.5V?

22mΩ typical.

What is the gate threshold voltage range?

0.5V to 1.5V.

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