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885 pcs
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885 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The STMicroelectronics STT13005D is a high voltage, fast-switching NPN power transistor manufactured using high voltage multi-epitaxial planar technology. It is designed for applications requiring high switching speeds and medium voltage capability, such as electronic ballasts for fluorescent lighting and flyback and forward single transistor low power converters.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 400V and a continuous collector current (IC) of 2A. The device also features an integrated antiparallel collector-emitter diode for enhanced performance. It is supplied in a SOT-32-3 package suitable for through-hole mounting.
With a maximum power dissipation of 45W at 25°C and a maximum operating junction temperature of 150°C, the STT13005D is built for demanding applications. Its design utilizes a cellular emitter structure with planar edge termination to achieve high switching speeds while maintaining a wide RBSOA.
This transistor is well-suited for use in lighting applications and low-cost switch-mode power supplies. The SOT-32-3 package is commonly used in power applications where through-hole mounting is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 400V.
The maximum continuous collector current is 2A, with a peak current of 4A for less than 5ms.
The STT13005D is available in a SOT-32-3 (TO-225AA/TO-126-3) through-hole package.
The maximum operating junction temperature is 150°C.
The minimum DC current gain is 10 at IC=500mA and VCE=5V, and 8 at IC=2A and VCE=5V.
The maximum thermal resistance junction-to-case is 2.8°C/W.