| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | 823 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STSJ50NH3LL is an N-Channel power MOSFET from STMicroelectronics, utilizing MOSFET (Metal Oxide) technology. It is designed for low-voltage power switching applications. The device offers a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 50A at case temperature. The on-resistance (Rds on) is a low 10.5mOhm maximum at 6A and 10V gate drive, enabling efficient operation. Gate threshold voltage (Vgs(th)) is 1V maximum at 250µA, and total gate charge (Qg) is 12nC maximum at 4.5V, supporting fast switching. Input capacitance (Ciss) is 965pF maximum at 25V.
Power dissipation is rated at 50W at case temperature (Tc) and 3W at ambient temperature (Ta). The device operates over a junction temperature range of -55°C to 150°C. It is housed in an 8-SOIC package (0.154" width) with an exposed pad, and is surface mountable. This package aids thermal management by providing a low thermal resistance path to the PCB.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
It comes in an 8-SOIC package with exposed pad (0.154", 3.90mm width) for surface mount mounting.
The junction temperature range is -55°C to 150°C.
Maximum on-resistance is 10.5mOhm at 6A drain current and 10V gate-source voltage.
Maximum gate charge is 12nC at 4.5V gate voltage.
Maximum continuous drain current is 50A at case temperature (Tc).
Maximum input capacitance is 965pF at 25V drain-source voltage.