| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25,868 pcs
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25868 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Technology |
The STSJ100NHS3LL from VBsemi is an N-channel Power MOSFET utilizing STripFET III technology. This device offers a drain-source voltage of 30V and a continuous drain current rating of 20A at 25°C.
Key electrical characteristics include a maximum junction-to-case thermal resistance of 1.8°C/W and a maximum junction-to-pcb thermal resistance of 42°C/W. The MOSFET is designed for optimal RDS(on) x Qg trade-off at 4.5V, contributing to reduced switching and conduction losses.
This MOSFET is suitable for switching applications, particularly in DC-DC converters for computer and telecom systems. It integrates a monolithic Schottky diode and is packaged in a PowerSO-8 format, supplied on tape and reel.
Operating junction and storage temperatures range from -55°C to 150°C. The device also features a pulsed drain current of 80A and avalanche current capability.
The drain-source voltage (VDS) is 30V.
The continuous drain current at TC = 25°C is 20A.
The STSJ100NHS3LL is supplied in a PowerSO-8 package on tape and reel.
The operating junction temperature ranges from -55°C to 150°C.
This MOSFET utilizes STripFET III technology.