| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,077 pcs
|
30077 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This P-Channel MOSFET from STMicroelectronics, part number STS9P3LLH6, is designed for various electronic applications requiring efficient power switching. It features a maximum drain-source voltage (Vdss) of 30V and can handle a continuous current of 9A under typical conditions (Ta).
The device offers a low on-resistance (Rds On) of 15mOhm maximum at 4.5A and 10V gate-source voltage, ensuring minimal power loss during operation. The input capacitance (Ciss) is rated at 2615 pF maximum at 25V, and the total gate charge (Qg) is 24 nC maximum at 4.5V gate-source voltage.
Operating within a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for demanding environments. It is housed in a standard 8-SOIC package with a surface mount type, facilitating integration into compact circuit designs. The maximum power dissipation is 2.7W (Ta).
Compliance information indicates RoHS3 compliance and an MSL rating of 1, suggesting suitability for standard manufacturing processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
9A at ambient temperature.
15mOhm at Vgs=10V, Id=4.5A.
-55°C to 150°C junction temperature.
8-SOIC (0.154", 3.90mm Width) surface mount package.
2V maximum at 250µA.
2615pF at Vds=25V.