| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
27,500 pcs
|
27500 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STS9NF30L from STMicroelectronics is an N-Channel MOSFET with a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 9A at a case temperature (Tc).
This MOSFET utilizes Metal Oxide technology and is housed in an 8-SOIC package, suitable for surface mount applications. Key electrical characteristics include a maximum on-resistance (Rds On) of 20mOhm at 4.5A drain current and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 1V at 250µA.
With a maximum operating temperature of 150°C (TJ) and a power dissipation of 2.5W (Tc), the STS9NF30L is designed for reliable performance in various power management circuits. The input capacitance (Ciss) is 730pF at 25V, and the gate charge (Qg) is 12.5nC at 4.5V gate-source voltage.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
8-SOIC (0.154", 3.90mm Width).
150°C.
20 mOhm maximum at 4.5 A drain current and 10 V gate voltage.
9 A at case temperature.
12.5 nC maximum at 4.5 V gate voltage.