STS8N6LF6AG The STMicroelectronics STS8N6LF6AG is an N-Channel MOSFET designed for various electronic applications. It features a 60V drain-source voltage and 8A continuous drain current.
Mfr Part #:

STS8N6LF6AG

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STS8N6LF6AG is an N-Channel MOSFET designed for various electronic applications. It features a 60V drain-source voltage and 8A continuous drain current.
✓ Total Stock: 8,500 pcs
$ Price Range: $2.56

STS8N6LF6AG Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,500 pcs
3500 pcs On Request 1 On Request On Request 19+ROHS On Request On Request

STS8N6LF6AG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STS8N6LF6AG Description

Short technical summary and product information.

This N-Channel MOSFET from STMicroelectronics, part number STS8N6LF6AG, is suitable for applications requiring robust switching capabilities. It offers a drain-to-source voltage of 60V and a continuous drain current of 8A at 25°C.

 

The device utilizes Metal Oxide Semiconductor (MOSFET) technology and is housed in a standard 8-SOIC package, designed for surface mounting. Key electrical characteristics include a maximum on-resistance of 24mOhm at 4A and 10V, a gate threshold voltage of 2.5V at 250µA, and a maximum gate charge of 27 nC at 10V. The operating temperature range is from -55°C to 175°C.

 

With a maximum power dissipation of 3.2W (Ta), this MOSFET is engineered for reliable performance in demanding environments. It supports gate drive voltages between 4.5V and 10V, with a maximum gate-source voltage rating of ±20V. The input capacitance is rated at 1340 pF at 25V.

STS8N6LF6AG Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STS8N6LF6AG N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

STS8N6LF6AG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STS8N6LF6AG Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STS8N6LF6AG Features

  • N-Channel MOSFET technology
  • 60V drain-source voltage rating
  • 8A continuous drain current
  • Surface mount 8-SOIC package
  • Wide operating temperature range

STS8N6LF6AG Applications

  • Power switching applications
  • General purpose electronics
  • Industrial control systems
  • Automotive electronics

STS8N6LF6AG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60V.

What is the maximum continuous drain current?

8A at 25°C ambient temperature.

What is the maximum on-resistance?

24mOhm at 4A drain current and 10V gate voltage.

What is the gate threshold voltage?

2.5V maximum at 250µA drain current.

What is the typical gate charge?

27nC maximum at 10V gate voltage.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What package is available?

8-SOIC surface mount package.

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