| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STS8DNF3LL is a dual N-channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 30V and can handle a continuous drain current of 8A. The MOSFET exhibits a low on-resistance of 20mOhm at 4A and 10V, ensuring efficient power transfer.
With a gate charge (Qg) of 17nC at 5V and a gate threshold voltage (Vgs(th)) of 1V at 250µA, this MOSFET is suitable for logic-level gate drive applications. It operates at temperatures up to 150°C (TJ) and dissipates up to 1.6W of power.
The STS8DNF3LL is housed in a standard 8-SOIC package, measuring 0.154 inches (3.90mm) in width, and is designed for surface mounting. Its configuration includes two N-channel MOSFETs, making it a versatile component for integrated circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The STS8DNF3LL has a maximum drain-to-source voltage of 30V.
The continuous drain current rating is 8A.
The maximum on-resistance is 20mΩ at 4A drain current and 10V gate-source voltage.
The maximum gate-source threshold voltage is 1V at 250µA drain current.
The device is supplied in an 8-SOIC (0.154-inch, 3.90mm width) surface-mount package.
The maximum operating junction temperature is 150°C.
Yes, the FET feature is logic level gate.