STS8DN3LLH5

The STS8DN3LLH5 is a dual N-channel MOSFET array manufactured by STMicroelectronics. This component integrates two independent N-channel enhancement mode field-effect transistors into a single surface-mount package. It is engineered for high-efficiency power switching and load management in compact electronic designs.

Key electrical characteristics include a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current rating of 10A. The device features a logic level gate, allowing direct drive from standard digital logic outputs. At a gate-source voltage of 10V and drain current of 5A, the maximum on-resistance (Rds(on)) is specified at 19mOhm. Additional parameters include a maximum gate charge of 5.4nC at 4.5V and a gate threshold voltage of 1V at 250µA.

Thermal performance supports operation across a junction temperature range of -55°C to 150°C, with a total power dissipation rating of 2.7W. The input capacitance is 724pF at 25V. The components are housed in an 8-SOIC package with a width of 3.90mm, optimized for automated surface mount assembly. This configuration makes the STS8DN3LLH5 suitable for battery protection circuits, motor control interfaces, and general-purpose power switching where space constraints and low conduction losses are critical.