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STS8C5H30L The STMicroelectronics STS8C5H30L is an N/P-Channel MOSFET with a 30V drain-source voltage rating. It features a low 22mOhm Rds On and is supplied in an 8-SOIC package.
Mfr Part #:

STS8C5H30L

Available from 4 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STS8C5H30L is an N/P-Channel MOSFET with a 30V drain-source voltage rating. It features a low 22mOhm Rds On and is supplied in an 8-SOIC package.
✓ Total Stock: 97,613 pcs
$ Price Range: $1.64

STS8C5H30L Available from 4 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STS8C5H30L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id
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STS8C5H30L Description

Short technical summary and product information.

The STMicroelectronics STS8C5H30L is a versatile N/P-Channel MOSFET designed for various applications. It offers a drain-source voltage (Vdss) of 30V and can handle currents of 8A and 5.4A respectively. The MOSFET exhibits a low on-resistance (Rds On) of 22mOhm at 4A and 10V, ensuring efficient power delivery.

 

Featuring a Logic Level Gate, this device is suitable for low-voltage control applications. Its input capacitance (Ciss) is 857pF at 25V, and the gate charge (Qg) is 10nC at 5V. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 250µA.

 

Packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount configuration, the STS8C5H30L has a power dissipation rating of 2W and an operating temperature range of up to 150°C (TJ). It is constructed using MOSFET (Metal Oxide) technology.

STS8C5H30L Quick Information

Product Type: MOSFET
Canonical Name: STS8C5H30L N/P-Channel MOSFET
Subcategory: N/P-Channel

STS8C5H30L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STS8C5H30L Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

STS8C5H30L Features

  • N/P-Channel MOSFET technology.
  • 30V drain-source voltage rating.
  • 8A and 5.4A current capability.
  • Low 22mOhm on-resistance.
  • Surface mount 8-SOIC package.

STS8C5H30L Applications

  • Suitable for power switching circuits.
  • Ideal for battery-powered devices.
  • Used in low-voltage control systems.
  • Efficient for load management.

STS8C5H30L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STS8C5H30L?

The maximum drain-to-source voltage is 30V.

What package is the STS8C5H30L available in?

It is offered in an 8-SOIC surface-mount package.

What is the maximum junction temperature?

The maximum junction temperature is 150°C.

What are the current ratings for each channel?

The N-channel is rated at 8A and the P-channel at 5.4A.

What is the maximum on-resistance at Vgs=10V?

The maximum on-resistance is 22mOhm at Id=4A and Vgs=10V.

What is the maximum gate threshold voltage?

The maximum gate threshold voltage is 1V at Id=250µA.

Is the STS8C5H30L an N-channel or P-channel device?

It is a complementary N and P-channel MOSFET array.

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