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28,974 pcs
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28974 pcs | On Request | 1 | On Request | On Request | 1404+PBF | On Request | On Request |
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The Samhop STS8201 is a Dual N-Channel Enhancement Mode Field Effect Transistor designed for surface mount applications. It features a super high dense cell design for low RDS(ON).
Key electrical specifications include a drain-source breakdown voltage (BVDSS) of 20V and a continuous drain current (ID) of 6A at 25°C ambient temperature. The on-state resistance (RDS(ON)) is as low as 20.0 mΩ at VGS=4.5V and ID=3A. The device also has a gate threshold voltage (VGS(th)) of 0.5V maximum.
Thermal characteristics include a maximum power dissipation of 1.25W at 25°C (TA) and a junction-to-ambient thermal resistance of 100°C/W. The operating and storage temperature range is -55°C to 150°C.
The STS8201 is housed in a compact TSOT-26 package, making it suitable for space-constrained designs. Its rugged and reliable construction, along with ESD protection, makes it a versatile component for various electronic circuits.
The drain-source breakdown voltage (BVDSS) is 20V.
The continuous drain current (ID) is 6A at 25°C.
The typical on-state resistance is 20.0 mΩ at VGS=4.5V and ID=3A.
The gate threshold voltage is a maximum of 0.5V.
The operating junction and storage temperature range is -55°C to 150°C.
The STS8201 is in a TSOT-26 package.
The RoHS status is RoHS3 Compliant.