| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
29,662 pcs
|
29662 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STS7PF30L is a P-Channel Power MOSFET from the STripFET II series. It is designed for high packing density and low on-resistance, making it suitable for applications like battery management in nomadic equipment and power management in cellular phones.
Key electrical specifications include a drain-source breakdown voltage of 30V and a continuous drain current of 7A at 25°C, decreasing to 4.4A at 100°C. The typical on-resistance is 0.016 Ohm at VGS = 10V and ID = 3.5A, with a maximum of 0.021 Ohm. The gate threshold voltage is typically 1.6V, with a maximum of 2.5V.
This MOSFET comes in a standard 8-SOIC package for easy automated surface mount assembly. It has a maximum power dissipation of 2.5W at 25°C and a thermal resistance junction-to-ambient of 50°C/W when mounted on a standard FR4 board.
Additional electrical characteristics include input capacitance of 2600 pF, output capacitance of 523 pF, and reverse transfer capacitance of 174 pF. The gate charge is a maximum of 38 nC.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the STS7PF30L is 30V.
The continuous drain current at 25°C is 7A.
The maximum Rds(on) is 0.021 Ohm at 3.5A drain current and 10V gate-source voltage.
The gate threshold voltage (Vgs(th)) has a maximum value of 2.5V at 250µA drain current.
The STS7PF30L is available in an 8-SOIC package for surface mounting.
The maximum power dissipation is 2.5W at 25°C case temperature.