| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,656 pcs
|
25656 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STS7P4LLF6 is a P-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Tj) of 7A. The MOSFET has a maximum power dissipation of 2.7W (Ta).
Key electrical characteristics include a gate charge (Qg) of 22 nC at 4.5V and an input capacitance (Ciss) of 2850 pF at 25V. The on-resistance (Rds On) is a maximum of 20.5 mOhm at 3.5A and 10V. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 250µA, with a maximum gate-source voltage (Vgs) of ±20V.
This device operates at temperatures up to 150°C (TJ) and is housed in an 8-SOIC package with a surface mount type. The technology used is MOSFET (Metal Oxide). It is classified as RoHS3 Compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
7A.
20.5mOhm maximum at 3.5A and 10V.
Maximum 150°C.
8-SOIC (0.154", 3.90mm Width).
1V maximum at 250µA.
22nC at Vgs=4.5V.