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STS7NF60L The STMicroelectronics STS7NF60L is an N-Channel MOSFET designed for various electronic applications. It features a 60V drain-source voltage and a 7.5A continuous drain current.
Mfr Part #:

STS7NF60L

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STS7NF60L is an N-Channel MOSFET designed for various electronic applications. It features a 60V drain-source voltage and a 7.5A continuous drain current.
✓ Total Stock: 7,500 pcs
$ Price Range: $2.56

STS7NF60L Available from 1 distributor

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✓ Non-Authorised
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7,500 pcs
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STS7NF60L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STS7NF60L Description

Short technical summary and product information.

The STMicroelectronics STS7NF60L is an N-Channel MOSFET with a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 7.5A at 25°C. It utilizes Metal Oxide Semiconductor (MOSFET) technology and is housed in an 8-SOIC surface mount package.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 19.5mOhm at 3.5A and 10V, a gate threshold voltage (Vgs(th)) of 1V at 250µA, and a maximum gate charge (Qg) of 34nC at 4.5V. The device can handle a maximum gate-source voltage (Vgs) of ±16V and has an input capacitance (Ciss) of 1700pF at 25V. The maximum power dissipation is rated at 2.5W (Tc).

 

This MOSFET operates at temperatures up to 150°C (TJ). It is suitable for applications requiring efficient switching and power handling within its specified parameters. The surface mount package facilitates integration into compact PCB designs.

STS7NF60L Quick Information

Product Type: MOSFET
Series: STripFET II
Canonical Name: STMicroelectronics STS7NF60L N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

STS7NF60L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STS7NF60L Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STS7NF60L Features

  • Rated for 60V drain-to-source voltage operation.
  • Supports 7.5A continuous drain current at case temperature.
  • Low 19.5mΩ on-resistance minimizes conduction losses.
  • Fast switching with 34nC gate charge and 1700pF capacitance.
  • Surface mount 8-SOIC package for compact PCB layouts.

STS7NF60L Applications

  • Ideal for DC-DC converter power stages.
  • Used in motor control and driver circuits.
  • Suitable for battery protection switch designs.
  • Applied in general-purpose power switching modules.

STS7NF60L FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

60 volts.

What package type does the STS7NF60L use?

It uses an 8-SOIC surface mount package with a 0.154-inch width.

What is the maximum operating junction temperature?

150 degrees Celsius.

What is the maximum on-resistance at 10V gate drive?

19.5 milliohms.

What is the maximum gate threshold voltage?

1 volt at 250 microamperes.

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