STS6P3LLH6 The STMicroelectronics STS6P3LLH6 is a P-Channel MOSFET designed for various applications. It offers a 30V drain-to-source voltage and a continuous drain current of 6A.
Mfr Part #:

STS6P3LLH6

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STS6P3LLH6 is a P-Channel MOSFET designed for various applications. It offers a 30V drain-to-source voltage and a continuous drain current of 6A.
✓ Total Stock: 35,857 pcs
$ Price Range: $2.56

STS6P3LLH6 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
26,895 pcs
26895 pcs On Request 1 On Request On Request 16+ On Request On Request
Non-Authorised Inventory information
7,500 pcs
7500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,462 pcs
1462 pcs On Request 1 On Request On Request 2014+ On Request On Request

STS6P3LLH6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STS6P3LLH6 Description

Short technical summary and product information.

The STMicroelectronics STS6P3LLH6 is a P-Channel MOSFET with a drain-to-source voltage (Vdss) of 30V. It is rated for a continuous drain current (Id) of 6A at 25°C and has a maximum power dissipation of 2.7W (Ta).

 

This MOSFET features a low on-resistance (Rds On) of 30mOhm at 3A and 10V gate drive. The gate threshold voltage (Vgs(th)) is 1V (min) at 250µA, and the maximum gate-source voltage (Vgs) is ±20V. It has a gate charge (Qg) of 12nC at 4.5V and an input capacitance (Ciss) of 1450pF at 24V.

 

The STS6P3LLH6 operates at temperatures up to 150°C (TJ). It is constructed using MOSFET (Metal Oxide) technology and comes in a surface mount 8-SOIC package.

 

This component is suitable for applications requiring a P-Channel MOSFET with moderate power handling and low on-resistance in a compact surface-mount form factor.

STS6P3LLH6 Quick Information

Product Type: MOSFET
Canonical Name: STS6P3LLH6 P-Channel MOSFET
Subcategory: P-Channel

STS6P3LLH6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STS6P3LLH6 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STS6P3LLH6 Features

  • 30V drain-to-source voltage rating.
  • 6A continuous drain current capability.
  • Low 30mOhm Rds On resistance.
  • Operates up to 150°C junction temperature.
  • Surface mount 8-SOIC package.

STS6P3LLH6 Applications

  • Suitable for power switching circuits.
  • Used in load management applications.
  • Ideal for battery-powered devices.
  • Applicable in general purpose switching.

STS6P3LLH6 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating?

30V.

What is the continuous drain current rating?

6A at 25°C.

What is the on-resistance?

30mOhm maximum at 3A, 10V.

What is the operating junction temperature?

150°C maximum.

What package is the STS6P3LLH6 available in?

8-SOIC surface-mount package.

What is the gate threshold voltage?

1V maximum at 250µA.

What is the total gate charge?

12nC maximum at 4.5V.

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