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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The STS6N20 from Samhop Microelectronics Corp. is an N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers a drain-source breakdown voltage (V DSS) of 60V and a continuous drain current (ID) of 0.8A at 25°C.
This MOSFET features a low on-resistance (R DS(ON)) with a maximum of 1.05Ω at VGS=10V and 1.30Ω at VGS=4.5V. The typical gate threshold voltage (VTH) is 1V, with a range of 1-3V. The device utilizes a super high dense cell design for improved performance.
Designed for surface mounting, the STS6N20 comes in a compact SOT-23 package. Its rugged and reliable construction makes it suitable for applications requiring efficient switching and power management. The logic-level gate drive capability allows for compatibility with lower voltage control signals.
The drain-source breakdown voltage (V DSS) is 60V.
The continuous drain current (ID) is 0.8A at 25°C.
The maximum on-resistance (Rds(on)) at VGS=10V is 1.05Ω.
The maximum on-resistance (Rds(on)) at VGS=4.5V is 1.30Ω.
The typical gate threshold voltage (VTH) is 1V.
The STS6N20 is available in a surface mount SOT-23 package.
