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28,974 pcs
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28974 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The VBsemi STS6601 is a P-channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage of -60V and a continuous drain current of -6.5A. The device exhibits a low on-resistance of 50mΩ at a gate-source voltage of 10V, with other Rds(on) values specified at 75mΩ and 85mΩ.
This MOSFET utilizes Trench technology and is packaged in a SOT23-6 surface-mount configuration. Its key electrical characteristics include a gate-source voltage rating of ±20V and a threshold voltage ranging from -1V to -3V. The P-channel configuration makes it suitable for applications requiring a negative voltage swing for switching.
Applications for the STS6601 include power management, battery protection circuits for overcharge, over-discharge, and short-circuit protection, current control, and power switching. It is also applicable in battery charge and discharge management systems, contributing to efficient energy conversion and circuit safety.
-60V.
-6.5A.
50mΩ typical at VGS=10V, with 75mΩ at VGS=4.5V and 85mΩ at VGS=2.5V.
-1V to -3V.
SOT23-6.
Trench technology.
P-Channel.