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STS5P3LLH6 The STMicroelectronics STS5P3LLH6 is a P-Channel MOSFET with a 30V drain-source voltage and 5A continuous drain current. It is designed for surface mount applications in an 8-SOIC package.
Mfr Part #:

STS5P3LLH6

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STS5P3LLH6 is a P-Channel MOSFET with a 30V drain-source voltage and 5A continuous drain current. It is designed for surface mount applications in an 8-SOIC package.
✓ Total Stock: 28,542 pcs
$ Price Range: $2.56

STS5P3LLH6 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
28,542 pcs
On Request
28542 pcs On Request 1 On Request On Request 17+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STS5P3LLH6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STS5P3LLH6 Description

Short technical summary and product information.

The STMicroelectronics STS5P3LLH6 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 5A at 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 56mOhm at 2.5A and 10V, a gate threshold voltage (Vgs(th)) of 2.5V at 250µA, and a maximum gate-source voltage (Vgs) of ±20V. The input capacitance (Ciss) is 639 pF at 25V, and the gate charge (Qg) is 6 nC at 4.5V.

 

This MOSFET has a maximum power dissipation of 2.7W (Ta) and an operating temperature range of -55°C to 150°C (TJ). It is housed in an 8-SOIC package suitable for surface mounting.

 

The STS5P3LLH6 is built using MOSFET (Metal Oxide) technology and belongs to the DeepGATE™ and STripFET™ H6 series.

STS5P3LLH6 Quick Information

Product Type: MOSFET
Series: DeepGATE™
Canonical Name: STS5P3LLH6 P-Channel MOSFET
Subcategory: Single FETs, MOSFETs

STS5P3LLH6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STS5P3LLH6 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STS5P3LLH6 Features

  • P-Channel MOSFET technology.
  • 30V drain-to-source voltage rating.
  • 5A continuous drain current capability.
  • 56mOhm maximum on-resistance.
  • Surface mount 8-SOIC package.

STS5P3LLH6 Applications

  • Power management in portable devices.
  • Load switching applications.
  • Battery protection circuits.
  • DC-DC converter designs.
  • Low-voltage motor control.

STS5P3LLH6 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the STS5P3LLH6?

30V.

What is the continuous drain current at 25°C?

5A.

What is the on-resistance?

56mOhm maximum at 2.5A and 10V.

What is the gate charge?

6 nC maximum at 4.5V.

What package does the STS5P3LLH6 come in?

8-SOIC surface-mount package.

What is the maximum operating junction temperature?

150°C.

What is the gate threshold voltage?

2.5V maximum at 250µA.

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