| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
44 pcs
|
44 pcs | On Request | 1 | On Request | On Request | 1020+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STS5N15F3 is a single N-Channel MOSFET belonging to the MOSFET family. It is designed to operate with a maximum drain-source voltage of 150V and can handle a continuous drain current of 5A (Tc). The device features a low on-resistance of 57mOhm at 2.5A and 10V gate-source voltage.
This MOSFET is housed in an 8-SOIC package and is designed for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include an input capacitance of 1300pF at 25V and a gate charge of 29nC at 10V. The gate threshold voltage is 4V at 250µA, and the maximum gate-source voltage is ±20V.
With a power dissipation rating of 2.5W (Tc), the STS5N15F3 is suitable for applications requiring efficient power switching. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor principles.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 150V.
It comes in an 8-SOIC surface mount package.
The operating junction temperature range is -55°C to 150°C.
The maximum on-resistance is 57mOhm at 2.5A and 10V gate drive.
The maximum gate threshold voltage is 4V at 250µA drain current.
The maximum gate charge is 29nC at 10V gate-source voltage.
The maximum input capacitance is 1300pF at 25V drain-source voltage.