| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
89,999 pcs
|
89999 pcs | On Request | 1 | On Request | On Request | 1144+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STS4NF100 is a single N-Channel MOSFET utilizing Metal Oxide technology. It is rated for a maximum drain-to-source voltage (Vdss) of 100V and a continuous drain current of 4A (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 70mOhm at 2A and 10V, a gate threshold voltage (Vgs(th)) of 4V at 250µA, and a gate charge (Qg) of 41nC at 10V. The input capacitance (Ciss) is 870pF at 25V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in an 8-SOIC package with a surface mount type. The maximum power dissipation is 2.5W (Ta).
The STS4NF100 is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 100 volts.
The component utilizes an 8-SOIC surface mount package with a 3.90 millimeter width.
The operating junction temperature range spans from -55 degrees Celsius to 150 degrees Celsius.
The maximum continuous drain current is 4 amperes when referenced to case temperature.
The maximum on-resistance is 70 milliohms when tested at 2 amperes and 10 volts.