STS4DPF20L Dual P-Channel MOSFET array rated for 20V drain-source voltage and 4A continuous current. Features 80mOhm maximum on-resistance at 2A, 10V gate drive.
Mfr Part #:

STS4DPF20L

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
Dual P-Channel MOSFET array rated for 20V drain-source voltage and 4A continuous current. Features 80mOhm maximum on-resistance at 2A, 10V gate drive.
✓ Total Stock: 31 pcs
$ Price Range: $1.64

STS4DPF20L Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
31 pcs
31 pcs On Request 1 On Request On Request 0424- On Request On Request

STS4DPF20L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

STS4DPF20L Description

Short technical summary and product information.

The STS4DPF20L is a dual P-Channel MOSFET array from STMicroelectronics, designed for applications requiring two independent P-Channel MOSFETs in a single 8SOIC package. It is rated for a maximum drain-to-source voltage of 20V and a continuous drain current of 4A.

 

Key electrical characteristics include a maximum on-resistance of 80mOhm at 2A drain current and 10V gate-source voltage, a maximum gate threshold voltage of 2.5V at 250µA, and an input capacitance of 1350pF at 25V drain-source voltage. The device can dissipate up to 1.6W of power and operates over a junction temperature range of -55°C to 150°C.

 

The MOSFETs use standard metal-oxide semiconductor technology and are housed in an 8-pin SOIC surface-mount package, suitable for automated assembly. Typical applications include load switching, power management, and DC-DC converter circuits where space is constrained.

STS4DPF20L Quick Information

Product Type: MOSFET Array
Canonical Name: STS4DPF20L Dual P-Channel MOSFET Array
Subcategory: P-Channel Dual Array

STS4DPF20L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STS4DPF20L Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

STS4DPF20L Features

  • Dual P-Channel MOSFETs in 8SOIC package.
  • Rated for 20V drain-source voltage maximum.
  • Continuous drain current up to 4A.
  • Low on-resistance of 80mOhm at 2A, 10V.
  • Operates from -55°C to 150°C junction temperature.

STS4DPF20L Applications

  • Ideal for load switching in portable devices.
  • Used in power management for battery-powered circuits.
  • Suitable for DC-DC converter output stages.
  • Can be used in low-voltage motor control.

STS4DPF20L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STS4DPF20L?

The maximum drain-to-source voltage (Vdss) is 20V.

What is the maximum continuous drain current rating?

The maximum continuous drain current is 4A.

What is the on-resistance of the STS4DPF20L?

The maximum on-resistance (Rds(on)) is 80mOhm at a drain current of 2A and gate-source voltage of 10V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 2.5V at a drain current of 250µA.

What is the input capacitance of the device?

The maximum input capacitance (Ciss) is 1350pF at a drain-source voltage of 25V.

What is the maximum power dissipation?

The maximum power dissipation is 1.6W.

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