| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
834 pcs
|
834 pcs | On Request | 1 | On Request | On Request | 735 | On Request | On Request | |
|
542 pcs
|
542 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
60 pcs
|
60 pcs | On Request | 1 | On Request | On Request | 10+29 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STS4DNFS30L is an N-Channel MOSFET with a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 4A. It offers a low on-resistance (Rds On) of 55mOhm at 2A and 10V Vgs, and a gate threshold voltage (Vgs(th)) of 1V at 250µA.
This MOSFET is constructed using MOSFET (Metal Oxide) technology and includes an isolated Schottky diode. It has a maximum power dissipation of 2W (Tc) and an input capacitance (Ciss) of 330pF at 25V. The gate charge (Qg) is 9nC at 5V, and the maximum gate-to-source voltage (Vgs) is ±16V.
Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, the STS4DNFS30L operates within a temperature range of -55°C to 150°C (TJ). It is RoHS3 compliant and has an MSL rating of 1 Unlimited.
This component is suitable for various power switching applications where efficient and reliable performance is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 30V.
The maximum continuous drain current is 4A at case temperature.
The maximum on-resistance is 55mΩ at Vgs=10V and Id=2A.
The total gate charge is 9nC at Vgs=5V.
The operating junction temperature range is -55°C to 150°C.
The device is available in an 8-SOIC surface-mount package (0.154" width, 3.90mm).
The maximum gate threshold voltage is 1V at Id=250µA.