| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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401,778 pcs
|
401778 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,718 pcs
|
1718 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
148 pcs
|
148 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The ST STS4DNF60L is an N-Channel MOSFET from STMicroelectronics, suitable for discrete semiconductor applications. This component operates with a Drain-Source Voltage (Vds) of 60V and can handle a Continuous Drain Current (Ids) of 4.00A. The Drain-to-Source On-Resistance (Rds) is specified at a low 0.045 Ohms, indicating efficient power handling.
This MOSFET has a Power Dissipation rating of 2.5W and a maximum Power Dissipation of 2000mW. The Threshold Voltage is 1.7V. It features a dual N-Channel configuration and comes in a SOIC-8 package, designed for surface mounting.
The operating temperature range for the STS4DNF60L is from -55°C to 150°C. It also includes specifications for Input Capacitance (Ciss) of 1030pF, Rise Time of 28ns, and Fall Time of 10ns, providing key electrical performance characteristics for design engineers.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The continuous drain current is 4A.
The drain-source on-resistance is 0.045Ω.
The operating temperature range is -55°C to 150°C.
The STS4DNF60L is available in an SOIC-8 surface-mount package.
The gate-source breakdown voltage is ±15V.
The STS4DNF60L has 2 channels.