| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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25,520 pcs
|
25520 pcs | On Request | 1 | On Request | On Request | 19+ROHS | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STS3P6F6 is a P-Channel MOSFET with a drain-source voltage rating of 60V and a continuous drain current capability of 3A at Tj. This device is designed for surface mount applications and comes in an 8-SOIC package.
Key electrical characteristics include a maximum on-resistance of 160mOhm at 1.5A and 10V, a gate charge of 6.4nC at 10V, and a gate threshold voltage of 4V at 250µA. The operating temperature range is -55°C to 150°C (TJ), with a maximum power dissipation of 2.7W (Tc).
This MOSFET is suitable for various power management and switching tasks in electronic circuits. Its surface mount package facilitates integration into compact designs. The device operates with a gate drive voltage of 10V for optimal Rds On performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 60 V.
The STS3P6F6 is available in an 8-SOIC surface mount package (0.154" width, 3.90mm width).
The operating junction temperature range is -55°C to 150°C.
The maximum continuous drain current is 3 A at the junction temperature condition.
The maximum on-resistance is 160 mOhm at 1.5A drain current and 10V gate drive.
The maximum gate threshold voltage is 4 V at 250 µA drain current.