| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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27,500 pcs
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27500 pcs | On Request | 1 | On Request | On Request | 0004+ | On Request | On Request |
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| SVHC Present |
The STMicroelectronics STS3DPFS30 is a P-Channel STripFET MOSFET combined with a low-drop Schottky rectifier. This configuration is designed for versatility in DC-DC converters for portable equipment, printers, and cellular phones.
Key electrical characteristics include a drain-source voltage (VDS) of 30V, a continuous drain current (ID) of 3A at 25°C, and a typical static drain-source on-resistance (RDS(on)) of 0.065 Ohms at 10V gate-source voltage. The integrated Schottky rectifier features an average forward current (IF(AV)) of 3A and a repetitive peak reverse voltage (VRRM) of 30V.
The device is housed in a standard SO-8 package. Thermal performance includes a junction-to-ambient thermal resistance of 85°C/W for the MOSFET and 100°C/W for the Schottky diode when mounted on an FR-4 board.
Absolute maximum ratings are provided for both the MOSFET and the Schottky diode, including drain-source voltage, gate-source voltage, continuous and pulsed drain current, and repetitive peak reverse voltage. The operating temperature range is from -65°C to 150°C.
The maximum drain-source voltage (VDS) for the STS3DPFS30 is 30V.
The continuous drain current (ID) for the STS3DPFS30 is 3A at 25°C.
The typical static drain-source on-resistance (RDS(on)) is 0.065 Ohms at 10V gate-source voltage and 1.5A drain current.
The STS3DPFS30 is supplied in an SO-8 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.