STS2DPFS20V The STS2DPFS20V is a P-Channel MOSFET from STMicroelectronics with a 20V drain-source voltage and 2.5A continuous drain current. It is supplied in an 8-SOIC package.
Mfr Part #:

STS2DPFS20V

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STS2DPFS20V is a P-Channel MOSFET from STMicroelectronics with a 20V drain-source voltage and 2.5A continuous drain current. It is supplied in an 8-SOIC package.
✓ Total Stock: 14,082 pcs
$ Price Range: $2.56

STS2DPFS20V Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,982 pcs
7982 pcs On Request 1 On Request On Request 04+ On Request On Request
Non-Authorised Inventory information
3,600 pcs
3600 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 14+ On Request On Request

STS2DPFS20V Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STS2DPFS20V Description

Short technical summary and product information.

The STMicroelectronics STS2DPFS20V is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current of 2.5A at 25°C case temperature. The MOSFET has a low on-resistance (Rds On) of 200mOhm maximum at 1A drain current and 4.5V gate-source voltage.

 

This device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2W. It is packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, making it suitable for space-constrained designs. The STS2DPFS20V also includes an isolated Schottky diode.

 

Key electrical characteristics include an input capacitance (Ciss) of 315pF at 15V and a gate charge (Qg) of 4.7nC at 4.5V. The gate-source voltage (Vgs) maximum is ±12V, with a gate threshold voltage (Vgs(th)) of 600mV maximum at 250µA. The drive voltage ranges from 2.7V to 4.5V for optimal Rds On performance.

STS2DPFS20V Quick Information

Product Type: MOSFET
Canonical Name: STS2DPFS20V P-Channel MOSFET
Subcategory: P-Channel

STS2DPFS20V Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STS2DPFS20V Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STS2DPFS20V Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • 2.5A continuous drain current capability.
  • Low on-resistance of 200mOhm maximum.
  • Surface mount 8-SOIC package.
  • Includes isolated Schottky diode feature.

STS2DPFS20V Applications

  • Suitable for power switching applications.
  • Used in battery management circuits.
  • Ideal for low-voltage power supplies.
  • Applicable in portable electronic devices.

STS2DPFS20V FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage (Vdss) of the STS2DPFS20V?

20V.

What package is the STS2DPFS20V available in?

8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the maximum operating junction temperature?

150°C.

What is the continuous drain current rating of the STS2DPFS20V?

2.5A at 25°C case temperature.

What is the typical on-resistance (Rds on) of this MOSFET?

200mOhm at 1A drain current and 4.5V gate voltage.

What is the input capacitance of the STS2DPFS20V?

315pF at Vds = 15V.

What is the gate charge of the STS2DPFS20V?

4.7nC at Vgs = 4.5V.

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