| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,982 pcs
|
7982 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request | |
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STS2DPFS20V is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current of 2.5A at 25°C case temperature. The MOSFET has a low on-resistance (Rds On) of 200mOhm maximum at 1A drain current and 4.5V gate-source voltage.
This device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2W. It is packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, making it suitable for space-constrained designs. The STS2DPFS20V also includes an isolated Schottky diode.
Key electrical characteristics include an input capacitance (Ciss) of 315pF at 15V and a gate charge (Qg) of 4.7nC at 4.5V. The gate-source voltage (Vgs) maximum is ±12V, with a gate threshold voltage (Vgs(th)) of 600mV maximum at 250µA. The drive voltage ranges from 2.7V to 4.5V for optimal Rds On performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
8-SOIC (0.154", 3.90mm Width) surface mount package.
150°C.
2.5A at 25°C case temperature.
200mOhm at 1A drain current and 4.5V gate voltage.
315pF at Vds = 15V.
4.7nC at Vgs = 4.5V.