STS2DNF30L The STMicroelectronics STS2DNF30L is an N-Channel MOSFET designed for 30V operation with a continuous drain current of 3A. It features a low Rds On of 110mOhm at 1A, 10V and a logic level gate.
Mfr Part #:

STS2DNF30L

Available from 4 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STS2DNF30L is an N-Channel MOSFET designed for 30V operation with a continuous drain current of 3A. It features a low Rds On of 110mOhm at 1A, 10V and a logic level gate.
✓ Total Stock: 23,483 pcs
$ Price Range: $1.64

STS2DNF30L Available from 4 distributors

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STS2DNF30L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Height
Input Capacitance (Ciss) (Max) @ Vds
Length
Mounting Style
Mounting Type
Number of Channels
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id
Width

STS2DNF30L Description

Short technical summary and product information.

The STMicroelectronics STS2DNF30L is a dual N-Channel MOSFET with a 30V drain-source breakdown voltage and a continuous drain current rating of 3A. It is designed with a logic level gate, making it suitable for applications requiring lower gate drive voltages.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 110mOhm at 1A and 10V, a gate charge (Qg) of 4.5nC at 10V, and a gate threshold voltage (Vgs(th)) of 2.5V at 250µA. The device also offers a power dissipation of 2W and an input capacitance (Ciss) of 121pF at 25V.

 

This MOSFET operates within a temperature range of -55°C to +150°C. It is packaged in an 8-SOIC surface mount package with dimensions of 5mm in length, 4mm in width, and 1.65mm in height. The technology utilized is Silicon (Si), and it is supplied on a reel.

 

Additional parameters include typical fall time of 8ns, rise time of 20ns, turn-off delay time of 12ns, and turn-on delay time of 19ns.

STS2DNF30L Quick Information

Product Type: MOSFET
Canonical Name: STS2DNF30L N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Arrays

STS2DNF30L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STS2DNF30L Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

STS2DNF30L Features

  • 30V drain-source breakdown voltage.
  • 3A continuous drain current.
  • 110mOhm maximum on-resistance.
  • Logic level gate feature.
  • Dual N-Channel configuration.

STS2DNF30L Applications

  • Suitable for low-voltage power switching.
  • Ideal for battery-powered devices.
  • Used in power management circuits.
  • Applicable for general-purpose switching.

STS2DNF30L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STS2DNF30L?

The drain-source breakdown voltage is 30 V.

What continuous drain current can the device handle?

The continuous drain current rating is 3 A.

What is the on-resistance of the STS2DNF30L?

The on-resistance is 110 mOhm maximum at 1 A, 10 V gate drive.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2.5 V at 250 µA drain current.

What package is the STS2DNF30L available in?

It is available in an SO-8 (8-SOIC) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is this a logic level gate MOSFET?

Yes, the device features a logic level gate with threshold voltage compatible with low-voltage logic.

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