| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,020 pcs
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11020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,383 pcs
|
1383 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,080 pcs
|
1080 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Height | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Length | |
| Mounting Style | |
| Mounting Type | |
| Number of Channels | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Width |
The STMicroelectronics STS2DNF30L is a dual N-Channel MOSFET with a 30V drain-source breakdown voltage and a continuous drain current rating of 3A. It is designed with a logic level gate, making it suitable for applications requiring lower gate drive voltages.
Key electrical characteristics include a maximum on-resistance (Rds On) of 110mOhm at 1A and 10V, a gate charge (Qg) of 4.5nC at 10V, and a gate threshold voltage (Vgs(th)) of 2.5V at 250µA. The device also offers a power dissipation of 2W and an input capacitance (Ciss) of 121pF at 25V.
This MOSFET operates within a temperature range of -55°C to +150°C. It is packaged in an 8-SOIC surface mount package with dimensions of 5mm in length, 4mm in width, and 1.65mm in height. The technology utilized is Silicon (Si), and it is supplied on a reel.
Additional parameters include typical fall time of 8ns, rise time of 20ns, turn-off delay time of 12ns, and turn-on delay time of 19ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30 V.
The continuous drain current rating is 3 A.
The on-resistance is 110 mOhm maximum at 1 A, 10 V gate drive.
The maximum gate threshold voltage is 2.5 V at 250 µA drain current.
It is available in an SO-8 (8-SOIC) surface mount package.
The operating junction temperature range is -55°C to +150°C.
Yes, the device features a logic level gate with threshold voltage compatible with low-voltage logic.