| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
32,333 pcs
|
32333 pcs | On Request | 1 | On Request | On Request | 1220 | On Request | On Request | |
|
385 pcs
|
385 pcs | On Request | 1 | On Request | On Request | 1130+ | On Request | On Request | |
|
112 pcs
|
112 pcs | On Request | 1 | On Request | On Request | 13+ /07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STS25NH3LL is an N-Channel MOSFET designed for power switching applications. It offers a drain-source voltage (Vdss) of 30V and a continuous drain current (Tc) of 25A, with a maximum power dissipation of 3.2W (Tc).
This MOSFET has a low on-state resistance (Rds On) of 3.5mOhm at 12.5A and 10V, and a gate charge (Qg) of 40nC at 4.5V. The threshold voltage (Vgs(th)) is 1V at 250µA, and the maximum gate-source voltage (Vgs) is ±18V.
It operates within a temperature range of -55°C to 175°C (TJ) and utilizes MOSFET (Metal Oxide) technology. The STS25NH3LL is housed in an 8-SOIC package, suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30V.
The maximum continuous drain current is 25A at case temperature (Tc).
The maximum on-state resistance is 3.5 mOhm at 12.5A drain current and 10V gate-source voltage.
The STS25NH3LL is available in an 8-SOIC surface-mount package with a 3.90mm width.
The operating junction temperature range is -55°C to 175°C.
The maximum gate threshold voltage is 1V at 250µA drain current.
The maximum power dissipation is 3.2W at case temperature (Tc).