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28,578 pcs
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28578 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The STS2309 from VBsemi is a P-Channel MOSFET designed for various electronic applications. It comes in a compact SOT-23 surface-mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a maximum drain-source voltage of -20V and a continuous drain current rating of -4A. The MOSFET exhibits a typical on-resistance of 57mΩ at VGS = 4.5V and VGS = 12V, ensuring efficient power handling. The gate threshold voltage is specified at -0.81V.
This MOSFET is well-suited for applications such as power management modules, including switching power supplies and battery charge/discharge management. Its low on-resistance also makes it effective in drive modules for motors and LEDs, as well as in current control circuits requiring precise regulation. The small SOT-23 package is also advantageous for signal amplification modules.
Typical application areas include industrial control systems for driving motors and actuators, power management in switching power supplies and battery systems, LED driver circuits for lighting control, and automotive electronics for power management and drive control.
The VBsemi STS2309 is a P-Channel MOSFET.
The maximum drain-source voltage for the STS2309 is -20V.
The STS2309 has a continuous drain current rating of -4A.
The typical on-resistance of the STS2309 is 57mΩ.
The typical gate threshold voltage for the STS2309 is -0.81V.
The VBsemi STS2309 MOSFET is in an SOT-23 package.