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25,868 pcs
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25868 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The STS2307A from VBsemi is a P-Channel MOSFET housed in a compact SOT23 package. This component is engineered for efficient power control, making it suitable for applications such as power switching modules, battery management systems, and DC-DC converters.
Key electrical characteristics include a maximum drain-source voltage of -20V and a maximum continuous drain current of -4A. The MOSFET exhibits a low on-resistance of 57mΩ at VGS=4.5V and VGS=12V, contributing to high-efficiency power transfer. The typical gate threshold voltage is -0.81V.
Its P-Channel configuration and SOT23 package make the STS2307A a versatile choice for integration into portable electronic devices like smartphones and tablets, where space is a critical design factor. The component's specifications support reliable performance in demanding power management scenarios.
The maximum drain-source voltage for the STS2307A is -20V.
The maximum continuous drain current for the STS2307A is -4A.
The on-resistance (RDS(ON)) of the STS2307A at VGS=4.5V is typically 57mΩ.
The typical gate threshold voltage (Vth) for the STS2307A is -0.81V.
The STS2307A MOSFET is in an SOT23 package.
The RoHS status of the STS2307A is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the STS2307A is 1 Unlimited.