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48,000 pcs
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48000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Technology |
The VBsemi STS2306E is a single N-channel MOSFET designed for various electronic applications. It features a maximum Drain-Source Voltage (VDS) of 20V and a Continuous Drain Current (ID) of 6A, making it suitable for power switching and amplification tasks.
The MOSFET has a Gate-Source Voltage (VGS) tolerance of 12V and a typical Gate Threshold Voltage (Vth) ranging from 0.5V to 1.5V. This component is housed in a compact SOT-23-3 package, facilitating surface-mount assembly on printed circuit boards.
Its technology is standard MOSFET, offering reliable performance for general-purpose switching and power management circuits. The STS2306E is designed to meet the demands of applications requiring efficient power control within its specified voltage and current ratings.
The maximum Drain-Source Voltage (VDS) for the STS2306E is 20V.
The Continuous Drain Current (ID) for the STS2306E is 6A.
The STS2306E is supplied in a SOT-23-3 package.
The Gate Threshold Voltage (Vth) for the STS2306E typically ranges from 0.5V to 1.5V.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.