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STS20N3LLH6 The STS20N3LLH6 is a dual N-channel MOSFET from VBsemi. It offers a high drain-to-source voltage of 450V and a continuous drain current of 0.4A at 25°C.
Mfr Part #:

STS20N3LLH6

Available from 1 distributors
Mfr Name: VBsemi
VBsemi
The STS20N3LLH6 is a dual N-channel MOSFET from VBsemi. It offers a high drain-to-source voltage of 450V and a continuous drain current of 0.4A at 25°C.
✓ Total Stock: 32,332 pcs

STS20N3LLH6 Available from 1 distributor

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Optech Co.,Limited ✓
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32,332 pcs
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32332 pcs On Request 1 On Request On Request 19+ On Request On Request
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STS20N3LLH6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Failure Rate
Gate Charge
Input Capacitance
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STS20N3LLH6 Description

Short technical summary and product information.

The STS20N3LLH6 is a dual N-channel MOSFET manufactured by VBsemi, belonging to the SuperMESH™ series. This component is designed for medium-power switching applications, featuring a high drain-to-source voltage (Vdss) of 450V and a continuous drain current (Id) of 0.4A at 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 4.5 Ohms at 500mA and 10V, and a gate threshold voltage (Vgs(th)) of 3.7V at 250µA. It also has an input capacitance (Ciss) of 160pF at 25V and a gate charge (Qg) of 10nC at 10V.

 

The device supports a maximum power dissipation of 1.6W and can operate at temperatures up to 150°C (TJ). It is housed in a compact 8-SOIC package suitable for surface mounting, with dimensions of 0.154" (3.90mm) width. The package is supplied on tape and reel (TR).

 

This MOSFET is suitable for various applications requiring reliable high-speed switching and efficient power management in compact designs.

STS20N3LLH6 Quick Information

Product Type: MOSFET
Series: SuperMESH™
Canonical Name: STS20N3LLH6 Dual N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

STS20N3LLH6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STS20N3LLH6 Features

  • Dual N-channel MOSFET configuration.
  • High 450V drain-to-source voltage.
  • 0.4A continuous drain current.
  • Surface mount 8-SOIC package.
  • 150°C maximum operating temperature.

STS20N3LLH6 Applications

  • Used in high-voltage switching circuits.
  • Ideal for power management systems.
  • Suitable for gate drive applications.
  • Applied in DC-DC converter designs.

STS20N3LLH6 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the STS20N3LLH6?

The drain-to-source voltage (Vdss) is 450V.

What is the continuous drain current of the STS20N3LLH6 at 25°C?

The continuous drain current (Id) is 0.4A at 25°C.

What is the maximum on-resistance for the STS20N3LLH6?

The maximum on-resistance (Rds On) is 4.5 Ohm at 500mA and 10V.

What is the operating temperature range for the STS20N3LLH6?

The operating temperature is up to 150°C (TJ).

What package type is the STS20N3LLH6 supplied in?

The STS20N3LLH6 is supplied in an 8-SOIC package, suitable for surface mounting.

What is the RoHS status of the STS20N3LLH6?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the STS20N3LLH6?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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