| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | 1132 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STS20N3LLH6 is a high-performance N-channel MOSFET. It is designed for medium-power switching applications, offering a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 20A at 25°C.
Key electrical characteristics include a low on-resistance (Rds On) of 4.7mOhm at 10A and 10V, a gate charge (Qg) of 17nC at 10V, and an input capacitance (Ciss) of 1690pF at 25V. The gate threshold voltage (Vgs(th)) is 1V at 250µA, with a maximum gate-source voltage of ±20V.
This MOSFET has a maximum power dissipation of 2.7W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). It is housed in a compact 8-SOIC package suitable for surface mounting.
The STS20N3LLH6 is suitable for various power management applications where efficient switching and high current handling are required in a small form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
20A at 25°C.
4.7mOhm maximum at 10A, 10V.
1V maximum at 250µA.
-55°C to 150°C (junction).
8-SOIC surface mount.
17nC maximum at 10V.