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STS1NK60Z N-Channel MOSFET with 600V maximum drain-source voltage and 250mA continuous drain current in an 8SO package.
Mfr Part #:

STS1NK60Z

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
N-Channel MOSFET with 600V maximum drain-source voltage and 250mA continuous drain current in an 8SO package.
✓ Total Stock: 21,560 pcs
$ Price Range: $1.32

STS1NK60Z Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
15,000 pcs
On Request
15000 pcs On Request 1 On Request On Request On Request On Request On Request
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,600 pcs
On Request
3600 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,960 pcs
On Request
2960 pcs On Request 1 On Request On Request 0634+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STS1NK60Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STS1NK60Z Description

Short technical summary and product information.

The STS1NK60Z is an N-Channel enhancement-mode MOSFET manufactured by STMicroelectronics. It is designed for medium-voltage switching applications requiring a maximum drain-to-source voltage of 600V and a continuous drain current of 250mA.

 

The device features a maximum gate-to-source voltage of ±30V and a maximum gate threshold voltage of 4.5V at 50µA. The total gate charge is specified at a maximum of 6.9nC at 10V, enabling efficient gate drive performance.

 

This MOSFET is housed in an 8SO surface-mount package, suitable for automated assembly and space-constrained designs. It is intended for use in power management, switching regulators, and other general-purpose switching circuits.

STS1NK60Z Quick Information

Product Type: MOSFET
Canonical Name: STS1NK60Z N-Channel MOSFET
Subcategory: Single MOSFET

STS1NK60Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STS1NK60Z Estimated Pricing

Qty Low High
1+ $1.32 $1.32

Estimated market price range - modelled values for guidance only, not live distributor offers.

STS1NK60Z Features

  • 600V maximum drain-to-source voltage.
  • 250mA continuous drain current rating.
  • ±30V maximum gate-to-source voltage.
  • 6.9nC maximum gate charge at 10V.
  • 8SO surface-mount package.

STS1NK60Z Applications

  • Used in power management circuits.
  • Suitable for switching regulator designs.
  • Ideal for low-power high-voltage switching.
  • Applicable in DC-DC converter stages.

STS1NK60Z FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STS1NK60Z?

600V.

What is the maximum gate-to-source voltage?

±30V.

What is the gate threshold voltage?

4.5V maximum at 50µA.

What is the total gate charge?

6.9nC maximum at 10V.

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